ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,780, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-Si, South Korea). "Memory device having hydrogen-ion bypass via... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,781, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Ferroelectric memory device with multi-level bit cell" wa... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,782, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device" was invented by... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,783, issued on July 14, was assigned to Qorvo US Inc. (Greensboro, N.C.). "Reconfigurable transistor device" was invented by Kevin Wesley K... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,784, issued on July 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,785, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device" was invented by... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,786, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor package and method of fabricat... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,787, issued on July 14, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Semiconductor device and method for fabrica... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,788, issued on July 14, was assigned to Kioxia Corp. (Tokyo). "Storage device" was invented by Reika Tanaka (Yokohama Kanagawa, Japan), Kun... Read More
ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,789, issued on July 14, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Semiconductor device including active diode area" w... Read More